Semicondutor

Plasma coating in Semiconductor industry

Customer Case

Generally used etching media: CF4, SF6, O2, Cl2, HBr and other corrosive gases, which would strongly corrode the working parts in the chamber. Especially when those gases are vaporized into high-density plasma, large number of micro particles would be produced in surface of aluminum alloys, quartz, ceramics and other parts, due to plasma bombardment and erosion. These released particles would significantly affect the quality and output of key parts, further would cause defects on the wafer and resulting in the dramatically shorten of the service life. Meanwhile, the oxide coating has good high temperature stability and heat resistance in harsh environments.

Depositing a layer of oxide coating on the inner surface of the chip etcher chamber can effectively prevent the generation of micro particles and protect the silicon wafer from contaminating. The maintenance cycle of the etching chamber would be extended from 15 days to 6 months.